Growth of Bi2O3 Ultrathin Films by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Growth of Bi2O3 Ultrathin Films by Atomic Layer Deposition

Published:2012-01-31 Issue:5 Volume:116 Page:3449-3456
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Shen Y. D.¹,Li Y. W.¹,Li W. M.²,Zhang J. Z.¹,Hu Z. G.¹,Chu J. H.¹³

Affiliation:

1. Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People’s Republic of China

2. Picosun Oy, Masalantie 365, 02430 Masala, Finland

3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp205180p

Reference63 articles.

1. Investigations on Evaporated Films of Bismuth Oxide II. Determination of Type of Conductivity and Photoconductivity Measurements on Doped and Undoped Layers

2. Optical properties of Bi2O3 thin films

3. Catalytic Abatement of Water Pollutants

4. Oxide ion conducting solid electrolytes based on Bi2O3

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