Role of Fluoride Doping in Low-Temperature Combustion-Synthesized ZrO<sub><i>x</i></sub> Dielectric Films-Reference-Cited by-同舟云学术

Role of Fluoride Doping in Low-Temperature Combustion-Synthesized ZrO_x Dielectric Films

Published:2022-03-02 Issue:10 Volume:14 Page:12340-12349
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sil Aritra¹,Goldfine Elise A.²,Huang Wei¹³^ORCID,Bedzyk Michael J.²^ORCID,Medvedeva Julia E.⁴^ORCID,Facchetti Antonio¹⁵^ORCID,Marks Tobin J.¹^ORCID

Affiliation:

1. Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States

2. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

3. School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan 611731, China

4. Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, United States

5. Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c22853

Reference67 articles.

1. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

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4. Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes

5. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

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