Versatile Solution-Processed Reductive Interface Layer for Contact Engineering of Staggered Organic Field-Effect Transistors-Reference-Cited by-同舟云学术

Versatile Solution-Processed Reductive Interface Layer for Contact Engineering of Staggered Organic Field-Effect Transistors

Published:2022-03-08 Issue:11 Volume:14 Page:13560-13571
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Dong Eun¹,Park Jun-Woo²,Seo SungYong³^ORCID,Baeg Kang-Jun¹^ORCID

Affiliation:

1. Department of Nanotechnology Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Republic of Korea

2. Next-Generation Battery Research Center, Korea Electrotechnology Research Institute (KERI), 12 Jeongiui-gil, Seongsan-gu,Changwon-si 51543, Gyeongsangnam-do, Republic of Korea

3. Department of Chemistry, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Republic of Korea

Funder

National Research Foundation of Korea

Busan Innovation Institute of Industry, Science and Technology Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c21864

Reference40 articles.

1. Ohmic transition at contacts key to maximizing fill factor and performance of organic solar cells

2. Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces

3. Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

4. Highly Efficient p-i-n and Tandem Organic Light-Emitting Devices Using an Air-Stable and Low-Temperature-Evaporable Metal Azide as an n-Dopant

5. Highly power efficient organic light-emitting diodes with a p-doping layer

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