A Kinetic Analysis of the Growth and Doping Kinetics of the SiC Chemical Vapor Deposition Process
Author:
Affiliation:
1. Dipartimento di Chimica, Materiali e Ingegneria Chimica “Giulio Natta”, Politecnico di Milano via Mancinelli 7, 20131 Milano, Italy
Publisher
American Chemical Society (ACS)
Subject
Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ie403907w
Reference50 articles.
1. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
2. Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
3. Modeling of epitaxial silicon carbide deposition
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