Defect Reconfiguration in Hole-Doped PbSe via Minute Te Doping for Significantly Enhanced Thermoelectric Performance-Reference-Cited by-同舟云学术

Defect Reconfiguration in Hole-Doped PbSe via Minute Te Doping for Significantly Enhanced Thermoelectric Performance

Published:2023-02-13 Issue:4 Volume:6 Page:2611-2617
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Sun Jinchang¹²,Cui Wenjun¹,Xie Chenghao¹²,Yu Tian³,Yan Fan¹,Chen Zhiquan³^ORCID,Sang Xiahan¹^ORCID,Tang Xinfeng¹^ORCID,Tan Gangjian¹^ORCID

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

2. International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

3. Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China

Funder

Ministry of Science and Technology of the People's Republic of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.3c00017

Reference49 articles.

1. Quasi-isostructural Alloying of Cu2SnSe3–Cu3SbSe4 toward Higher Thermoelectric Performance

2. The Thermoelectric Properties of SnSe Continue to Surprise: Extraordinary Electron and Phonon Transport

3. High-Performance Thermoelectric Energy Conversion: A Tale of Atomic Ordering in AgSbTe2

4. Cu2Se-Based liquid-like thermoelectric materials: looking back and stepping forward

5. Surface Oxide Removal for Polycrystalline SnSe Reveals Near-Single-Crystal Thermoelectric Performance

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