Engineering Intrinsic Flexibility in Polycrystalline Molecular Semiconductor Films by Grain Boundary Plasticization-Reference-Cited by-同舟云学术

Engineering Intrinsic Flexibility in Polycrystalline Molecular Semiconductor Films by Grain Boundary Plasticization

Published:2020-02-13 Issue:12 Volume:142 Page:5487-5492
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Zhao Dan¹²^ORCID,Chen Jianhua¹³^ORCID,Wang Binghao¹^ORCID,Wang Gang¹,Chen Zhihua⁴,Yu Junsheng²^ORCID,Guo Xugang³^ORCID,Huang Wei¹^ORCID,Marks Tobin J.¹^ORCID,Facchetti Antonio¹⁴^ORCID

Affiliation:

1. Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

3. Department of Materials Science and Engineering and Shenzhen Key Laboratory for Printed Organic Electronics, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China

4. Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States

Funder

Air Force Office of Scientific Research

China Scholarship Council

Northwestern University

Division of Materials Research

Flexterra

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

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