Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films-Reference-Cited by-同舟云学术

Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films

Published:2012-08-16 Issue:9 Volume:4 Page:4726-4730
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Seong Keun¹,Han Sora¹,Jeon Woojin¹,Yoon Jung Ho¹,Han Jeong Hwan¹,Lee Woongkyu¹,Hwang Cheol Seong¹

Affiliation:

1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am301094t

Reference15 articles.

1. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

2. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

3. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

4. Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

5. Transformation of the Crystalline Structure of an ALD TiO[sub 2] Film on a Ru Electrode by O[sub 3] Pretreatment

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