Electronic Structure of Noncentrosymmetric α-GeO2 with Oxygen Vacancy: Ab Initio Calculations and Comparison with Experiment-Reference-Cited by-同舟云学术

Electronic Structure of Noncentrosymmetric α-GeO2 with Oxygen Vacancy: Ab Initio Calculations and Comparison with Experiment

Author:

Atuchin V. V.¹²,Kaichev V. V.³⁴,Korolkov I. V.⁵,Saraev A. A.³,Troitskaia I. B.¹,Perevalov T. V.⁶,Gritsenko V. A.⁶

Affiliation:

1. Laboratory of Optical Materials and Structures, Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

2. Tomsk State University, Tomsk 634050, Russia

3. Boreskov Institute of Catalysis, SB RAS, 630090 Novosibirsk, Russia

4. Physical Department, Novosibirsk State University, 630090 Novosibirsk, Russia

5. Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk, Russia

6. Laboratory of Silicon Material Science, Rzhanov Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference64 articles.

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