Development of Crystal Growth Simulator Based on Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Silicon Chemical Vapor Deposition Processes-Reference-Cited by-同舟云学术

Development of Crystal Growth Simulator Based on Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Silicon Chemical Vapor Deposition Processes

Published:2012-06-01 Issue:23 Volume:116 Page:12525-12531
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kuwahara Takuya¹,Ito Hiroshi¹,Higuchi Yuji¹,Ozawa Nobuki¹,Kubo Momoji¹

Affiliation:

1. Fracture and Reliability Research Institute (FRRI), Graduate School of Engineering, Tohoku University, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp3002542

Reference62 articles.

1. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon

2. Stability of thin film solar cells having less-hydrogenated amorphous silicon i-layers

3. The Influence of the Si-H2Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells

4. Dielectric function ofa-Si:H based on local network structures

5. Species responsible for Si–H2 bond formation in a-Si:H films deposited using silane high frequency discharges

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