Thermal Stability of Precursors for Atomic Layer Deposition of TiO2, ZrO2, and HfO2: An Ab Initio Study of α-Hydrogen Abstraction in Bis-cyclopentadienyl Dimethyl Complexes-Reference-Cited by-同舟云学术

Thermal Stability of Precursors for Atomic Layer Deposition of TiO2, ZrO2, and HfO2: An Ab Initio Study of α-Hydrogen Abstraction in Bis-cyclopentadienyl Dimethyl Complexes

Published:2010-01-07 Issue:4 Volume:114 Page:1879-1886
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Zydor Aleksandra¹,Elliott Simon D.¹

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp9072608

Reference35 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Atomic layer epitaxy

3. Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors

4. Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

5. Thermal stability studies for advanced Hafnium and Zirconium ALD precursors

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