Low Voltage Operating Field Effect Transistors with Composite In2O3–ZnO–ZnGa2O4 Nanofiber Network as Active Channel Layer-Reference-Cited by-同舟云学术

Low Voltage Operating Field Effect Transistors with Composite In2O3–ZnO–ZnGa2O4 Nanofiber Network as Active Channel Layer

Published:2014-02-07 Issue:3 Volume:8 Page:2318-2327
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Choi Seung-Hoon¹,Jang Bong-Hoon²,Park Jin-Seong³,Demadrille Renaud⁴,Tuller Harry L.⁵,Kim Il-Doo²

Affiliation:

1. Optoelectronic Materials Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Republic of Korea

2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea

3. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul, 133-719, Republic of Korea

4. INAC/SPrAM (UMR 5819 CEA-CNRS-Univ. J. Fourier-Grenoble 1), Laboratoire d’Electronique Moléculaire Organique et Hybride, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France

5. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn405769j

Reference40 articles.

1. Logic Gates and Computation from Assembled Nanowire Building Blocks

2. Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications

3. Ballistic InAs Nanowire Transistors

4. Enhanced Sensing of Nucleic Acids with Silicon Nanowire Field Effect Transistor Biosensors

5. Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

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