Resistive Switching in Organic Memories with a Spin-Coated Metal Oxide Nanoparticle Layer-Reference-Cited by-同舟云学术

Resistive Switching in Organic Memories with a Spin-Coated Metal Oxide Nanoparticle Layer

Published:2008-03-18 Issue:14 Volume:112 Page:5254-5257
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Verbakel Frank¹,Meskers Stefan C. J.¹,de Leeuw Dago M.¹,Janssen René A. J.¹

Affiliation:

1. Molecular Materials and Nanosystems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands, Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands, and Philips Research Laboratories, High Tech Campus 4 WAG 11, 5656 AE Eindhoven, Netherlands

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp800624u

Reference23 articles.

1. Nonvolatile Memory Elements Based on Organic Materials

2. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

3. Organic Materials and Thin-Film Structures for Cross-Point Memory Cells Based on Trapping in Metallic Nanoparticles

4. Memory Effect and Negative Differential Resistance by Electrode- Induced Two-Dimensional Single- Electron Tunneling in Molecular and Organic Electronic Devices

5. Switching and filamentary conduction in non-volatile organic memories

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