W Doping and Voltage Driven Metal–Insulator Transition in VO2 Nano-Films for Smart Switching Devices-Reference-Cited by-同舟云学术

W Doping and Voltage Driven Metal–Insulator Transition in VO2 Nano-Films for Smart Switching Devices

Published:2019-09-19 Issue:10 Volume:2 Page:6738-6746
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Ling Chen¹^ORCID,Zhao Zhengjing¹^ORCID,Hu Xinyuan¹,Li Jingbo¹^ORCID,Zhao Xushan²,Wang Zongguo²,Zhao Yongjie¹^ORCID,Jin Haibo¹

Affiliation:

1. Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Application, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China

2. Computer Network Information Center, Chinese Academy of Sciences, Beijing 100190, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.9b01640

Reference66 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Self-Assembling VO2 Nanonet with High Switching Performance at Wafer-Scale

3. Three-Layered Hollow Nanospheres Based Coatings with Ultrahigh-Performance of Energy-Saving, Antireflection, and Self-Cleaning for Smart Windows

4. A 0.2 V Micro‐Electromechanical Switch Enabled by a Phase Transition

5. Enhancement of electronic-transport switching in single-crystal narrower VO2 nanowire channels through side-gate electric fields

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