Effects of Radical Site Location and Surface Doping on the Radical Chain-reaction on H−Si(100)-(2 × 1): A Density Functional Theory Study-Reference-Cited by-同舟云学术

Effects of Radical Site Location and Surface Doping on the Radical Chain-reaction on H−Si(100)-(2 × 1): A Density Functional Theory Study

Published:2008-09-24 Issue:41 Volume:112 Page:16078-16086
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Pei Yong¹²,Ma Jing¹²,Zeng Xiao Cheng¹²

Affiliation:

1. School of Chemistry and Chemical Engineering, Institute of Theoretical and Computational Chemistry, Key Laboratory of Mesoscopic Chemistry of MOE, Nanjing University, Nanjing, 210093, Peoples Republic of China

2. Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp802098s

Reference52 articles.

1. CONTROLLED MOLECULAR ADSORPTION ON SILICON: Laying a Foundation for Molecular Devices

2. Flexible electronic futures

3. Organometallic Chemistry on Silicon and Germanium Surfaces

4. Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects

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