Controllable Low Temperature Vapor-Solid Growth and Hexagonal Disk Enhanced Field Emission Property of ZnO Nanorod Arrays and Hexagonal Nanodisk Networks-Reference-Cited by-同舟云学术

Controllable Low Temperature Vapor-Solid Growth and Hexagonal Disk Enhanced Field Emission Property of ZnO Nanorod Arrays and Hexagonal Nanodisk Networks

Published:2012-07-27 Issue:8 Volume:4 Page:3852-3859
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yang Fan¹,Liu Wei-Hua²,Wang Xue-Wen¹,Zheng Jie²,Shi Ru-Yu¹,Zhao Hua¹,Yang He-Qing¹

Affiliation:

1. Key Laboratory of Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an, 710062, China

2. School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710049, China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am300561w

Reference57 articles.

1. Nanobelts of Semiconducting Oxides

2. Large-Scale Hexagonal-Patterned Growth of Aligned ZnO Nanorods for Nano-optoelectronics and Nanosensor Arrays

3. Synthesis of Aligned Arrays of Ultrathin ZnO Nanotubes on a Si Wafer Coated with a Thin ZnO Film

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Piezoelectric CO2 Reduction on ZnO Via α-Fe2O3 Decoration for Enhanced Activity and Selectivity;Catalysis Letters;2024-07-02

2. Zinc ion modulation of hydrated vanadium pentoxide for high-performance aqueous zinc ion batteries;Journal of Power Sources;2024-03

3. Deep-Level Transient Spectroscopy Studies on Four Different Zinc Oxide Morphologies;Crystals;2024-02-26

4. Enhanced electron field emission of two-dimensional boron-doped ZnO nanoflakes on nanocrystal diamond films;Diamond and Related Materials;2023-05

5. Morphological evolution and its correlation with optical and field emission properties in pulsed laser deposited ZnO nanostructures;Materials Science in Semiconductor Processing;2022-02