Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices-Reference-Cited by-同舟云学术

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Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices

Published:2020-04-09 Issue: Volume: Page:
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Container-title:Proceedings of The 28th International Workshop on Vertex Detectors — PoS(Vertex2019)
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Author:

Moll Michael

Publisher

Sissa Medialab

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Si -defect mode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-10

2. Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments;physica status solidi (a);2024-06-19

3. Investigation of low gain avalanche detectors exposed to proton fluences beyond 10¹⁵ n _eq cm^-2;Journal of Instrumentation;2024-05-01

4. Characterization of thin carbonated LGADs after irradiation up to 2.5· 10¹⁵ n_{1 Mev eq.}/cm²;Journal of Instrumentation;2024-04-01

5. Study of bulk damage of high dose gamma irradiated p-type silicon diodes with various resistivities;Journal of Instrumentation;2024-02-01

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