A mechanism for crystal twinning in the growth of diamond by chemical vapour deposition

Abstract

A model for the formation of crystal twins in chemical vapour deposited diamond materials is presented. The twinning mechanism originates from the formation of a hydrogen-terminated four carbon atom cluster on a local {111} surface morphology, which also serves as a nucleus to the next layer of growth. Subsequent growth proceeds by reaction at the step edges with one and two carbon atom-containing species. The model also provides an explanation for the high defect concentration observed in 〈111〉 growth sectors, the formation of penetration and contact twins, and the dramatic enhancement in polycrystalline diamond growth rates and morphology changes when small amounts of nitrogen are added to the plasma-assisted growth environments.