In situ characterization and control of compound semiconductor interfaces

Abstract

Formation of semiconductor interfaces for nano-structure devices requires an entirely UHV-based integrated fabrication/characterization system to achieve atomic-scale perfection. This paper discusses recently developed characterization and control techniques for use in such a system. The process characterization technique is based on photoluminescence and determines the surface state density distribution on processed ‘free’ surfaces of semiconductors. The interface control technique uses an ultrathin MBE Si interface control layer and has been applied to insulator-semiconductor, metal-semiconductor and semiconductor-semiconductor interfaces.