Effect of Ta Addition of Co-sputtered Amorphous Tantalum Indium Zinc Oxide Thin Film Transistors with Bias Stability-Reference-Cited by-同舟云学术

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Effect of Ta Addition of Co-sputtered Amorphous Tantalum Indium Zinc Oxide Thin Film Transistors with Bias Stability

Published:2014-11-01 Issue:11 Volume:14 Page:8163-8166
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Son Dae-Ho,Kim Dae-Hwan,Park Si-Nae,Sung Shi-Joon,Kang Jin-Kyu

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical performance and stability of tungsten indium zinc oxide thin-film transistors;Materials Letters;2018-03

2. Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor;Journal of Nanoscience and Nanotechnology;2015-10-01

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