Effect of Chemical Pressure at the Boundary of Mott Insulator to Itinerant Electron Limit Transition in Spinel Vanadates-Reference-Cited by-同舟云学术

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Effect of Chemical Pressure at the Boundary of Mott Insulator to Itinerant Electron Limit Transition in Spinel Vanadates

Published:2015-06-01 Issue:6 Volume:7 Page:1187-1196
ISSN:1947-2935
Container-title:Science of Advanced Materials
language:en
Short-container-title:sci adv mater

Author:

Shahi P.,Kumar A.,Singh Rahul,Singh Ripandeep,Sastry P. U.,Das A.,Joshi AmishG.,Ghosh A. K.,Banerjee A.,Chatterjee Sandip

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport properties of ZnV2O4 and its correlation to the doping at the cationic sites;Journal of Physics: Condensed Matter;2021-07-16

2. Recent progress on the characterization of the high-pressure behaviour of AVO4 orthovanadates;Progress in Materials Science;2018-08

3. Pressure induced effects on the chemical and magnetic structure of spinel MnV2O4;Journal of Physics: Condensed Matter;2017-07-31

4. Investigation of thermoelectric properties of ZnV2O4compound at high temperatures;Journal of Physics D: Applied Physics;2016-09-20

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