Three-Dimensional Architecture of Sulfur Doped Graphene for Supercapacitor

Abstract

The introduction of heteroatoms is beneficial to prevent the stacking of graphene and enhance the electrochemical performance of graphene-based electrode materials. In this work, the three-dimensional structure sulfur-doped graphene (SG) electrode materials were prepared by using PEDOT:PSS as sulfur source, which can form a polymer chain on the surface of the graphene oxide, thus the sulfur atoms can be successfully doped into the graphene lattice by annealing treatment. The obtained SG electrode material exhibits a high specific capacitance of 254 F g−1 at 0.5 A g−1, which is significantly better than that of the pure reduced graphene oxide. The significant increase in specific capacitance confirms that sulfur-doped graphene has a promising future in supercapacitor applications.