Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO2 Sidewall-Reference-Cited by-同舟云学术

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Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO2 Sidewall

Published:2019-10-01 Issue:10 Volume:19 Page:6061-6065
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Lee Ryoongbin¹,Lee Kitae¹,Kim Sihyun¹,Kwon Dae Woong²,Kim Sangwan³,Park Byung-Gook¹

Affiliation:

1. Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, USA 3

3. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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