Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering-Reference-Cited by-同舟云学术

Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

Published:2019-03-01 Issue:3 Volume:19 Page:1445-1450
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kaenrai Weerasaruth¹,Promros Nathaporn¹,Sittimart Phongsaphak¹,Chaleawpong Rawiwan¹,Charoenyuenyao Peerasil¹,Changcharoen Thanachai¹,Nopparuchikun Adison¹,Nogami Tomohiro²,Yoshitake Tsuyoshi²

Affiliation:

1. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand

2. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580, Japan

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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1. Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering;Materials Science in Semiconductor Processing;2022-08

2. Annealing effects and infrared photoelectric response of β-FeSi2 on Si (100) substrate prepared by pulsed laser deposition;Vacuum;2021-06

3. Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering;Thin Solid Films;2020-09

4. Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering;Thin Solid Films;2020-09

5. Light Detection and Carrier Transportation Mechanism in p-Type Si/n-Type Nanocrystalline FeSi2 Heterojunctions Produced via Radio-Frequency Magnetron Sputtering;Journal of Nanoscience and Nanotechnology;2020-08-01