Electrical Characterization of Composition Modulated In1−xSbx Nanowire Field Effect Transistors by Scanning Gate Microscopy-Reference-Cited by-同舟云学术

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Electrical Characterization of Composition Modulated In1−xSbx Nanowire Field Effect Transistors by Scanning Gate Microscopy

Published:2010-10-01 Issue:10 Volume:10 Page:6779-6782
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Martinez-Morales A. A.,Penchev M.,Zhong J.,Jing X.,Singh K. V.,Yengel E.,Khan M. I.,Ozkan C. S.,Ozkan M.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High density near amorphous InSb nanowire arrays and its photo-electric performance;Journal of Alloys and Compounds;2015-03

2. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope;Applied Physics Letters;2014-06-30

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