Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses-Reference-Cited by-同舟云学术

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Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses

Published:2018-02-01 Issue:2 Volume:13 Page:178-182
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Nemer J. P.,Santos M. V. Puydinger dos,Diniz J. A.,Pavanello M. A.

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rigorous 3D Model of Capacitance of Complementary Metal Oxide Semiconductor Compatible Optical Phase Shifters Based on Interleaved Junctions with Submicron Dimensions;J NANOELECTRON OPTOE;2020

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