High-Removal Selectivity Through Interaction Between Polyacrylamide and SiO<SUB>2</SUB> Film in Poly Isolation Chemical Mechanical Planarization-Reference-Cited by-同舟云学术

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High-Removal Selectivity Through Interaction Between Polyacrylamide and SiO₂ Film in Poly Isolation Chemical Mechanical Planarization

Published:2009-06-01 Issue:6 Volume:9 Page:3780-3784
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Kim Ye-Hwan,Lee Kee-June,Park Jea-Gun,Paik Ungyu

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance;Materials Science in Semiconductor Processing;2024-04

2. The role of ammonium citrate and dodecyl pyridinium chloride on chemical mechanical polishing relevant to SiO2 dielectric layer;Journal of Manufacturing Processes;2023-12

3. Insight on Surface Changes Post Chemical Mechanical Polishing (CMP) of the Silicon Substrate by Adding Polyoxyethylene Ether;ECS Journal of Solid State Science and Technology;2023-11-01

4. Synergistic effect of aminosilane and K2CO3 on improving Chemical Mechanical Polishing performance of SiO2 dielectric layer;Materials Science in Semiconductor Processing;2022-08

5. Circular Double-Patterning Lithography Using a Block Copolymer Template and Atomic Layer Deposition;Advanced Materials Interfaces;2018-04-20

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