In-Situ Synchrotron Radiation Photoemission Spectroscopy Study of the Initial Atomic Layer Deposition of Al2O3 Film on Si(001) Substrate-Reference-Cited by-同舟云学术

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In-Situ Synchrotron Radiation Photoemission Spectroscopy Study of the Initial Atomic Layer Deposition of Al₂O₃ Film on Si(001) Substrate

Published:2011-05-01 Issue:5 Volume:11 Page:4328-4332
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Kim S. H.,Lee B. K.,Baik J.,Jeon C.,Lee S. S.,Lee J.,Hwang H.-N.,Hwang C. C.,Park C.-Y.,An K.-S.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4 × 6 surface with trimethylaluminum and water as precursors;Applied Physics Letters;2012-11-19

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