Affiliation:
1. College of Science, Guilin University of Technology, Guilin 541004, China
Abstract
We report a theoretical investigation on effect of a δ-doping on spin-dependent dwell time for electron in embedded magnetic-electric-barrier nanostructure (EMEBN), which is fabricated by depositing a ferromagnetic stripe and a Schottky-metal stripe on top and bottom of
InAs/AlxIn1−xAs heterostructure, respectively. Dwell time still remains spin related after a δ-doping is comprised in EMEBN by atomic-layer doping. Moreover, due to a δ-doping dependent effective potential experienced by electron in this EMEBN,
both magnitude and sign of spin-polarized dwell time can be controlled by changing δ-doping. Therefore, this EMEBN can serve as a controllable temporal spin splitter for spintronics device applications.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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