Manipulating Electron-Spin Polarization via a δ-Potential in an Embedded Magnetic-Electric-Barrier Microstructure
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Published:2021-09-01
Issue:9
Volume:16
Page:1417-1422
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Yang Shuai-Quan1,
Lu Mao-Wang1,
Guo Qing-Meng1,
Qin Ying-Jie1,
Xie Shi-Shi1
Affiliation:
1. College of Science, Guilin University of Technology, Guilin, 541004, China
Abstract
We theoretically explore how to manipulate electron-spin polarization by a δ-potential in an embedded magnetic-electric-barrier microstructure (EMEBM), which can be fabricated experimentally by patterning a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe on top
and bottom of GaAs/AlxGa1_xAs heterostructure, respectively. Due to spin-orbit coupling (SOC) an appreciable electron-spin polarization effect still remains, even through a δ-potential is contained. Besides, electron-spin polarization
ratio can be controlled by δ-potential, which may result in a structurally-manipulable electron-spin filter for spintronics device applications.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials