3-D Numerical Simulation Study on 20 nm NMOSFET Design-Reference-Cited by-同舟云学术

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3-D Numerical Simulation Study on 20 nm NMOSFET Design

Published:2011-08-01 Issue:8 Volume:8 Page:1498-1501
ISSN:1546-1955
Container-title:Journal of Computational and Theoretical Nanoscience
language:en
Short-container-title:Jnl of Comp & Theo Nano

Author:

Shi Min,He Jin,Liu Zhiwei,Wang Wenping,Zhao Wei,Wang Ruonan,Wu Wen,Ma Yong,Zhang Dongwei,Bian Wei,Chan Mansun,Zhang Xukai,Zhang Lining

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Computational Mathematics,Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Gate-All-Around Tunneling Field-Effect Transistor with SiO₂ Core and Si Shell Structure;Journal of Computational and Theoretical Nanoscience;2014-08-01

2. A Pinned Photodiode Analytic Model Enabling Opto-Electronic Circuit Simulation;Journal of Computational and Theoretical Nanoscience;2014-02-01

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