Author:
Jung Yong Chan,Seong Sejong,Lee Taehoon,Park In-Sung,Ahn Jinho
Abstract
Resistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range of 250 °C to 350 °C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar
resistive switching behaviors. Resistive switching behaviors are related to the chemical bonding states of Y2O3 insulating films. As the insulating film growth temperature increases, Y2O3 film becomes much stoichiometric and little contaminated with
impurities. Moreover, the resistance ratio high resistance state to low resistance state increases at growth temperature over 300 °C.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
7 articles.
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