10.1023/A:1015011207910-Reference-Cited by-同舟云学术

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10.1023/A:1015011207910

Published:2001 Issue:1 Volume:8 Page:39-57
ISSN:0928-1045
Container-title:Journal of Computer-Aided Materials Design
language:
Short-container-title:

Author:

Kawamoto Atsushi,Cho Kyeongjae,Dutton Robert

Publisher

Springer Science and Business Media LLC

Subject

Computational Theory and Mathematics,Computer Science Applications,General Materials Science

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of High-k Gate Stack on Sub-10 nm SOI-FinFET for High-Performance Analog and RF Applications Perspective;ECS Journal of Solid State Science and Technology;2020-12-01

2. Assessment of high-k gate stacked In2O5Sn gate recessed channel MOSFET for x-ray radiation reliability;Engineering Research Express;2020-08-24

3. Defects in Oxides in Electronic Devices;Handbook of Materials Modeling;2020

4. Effect of Electron Effective Masses on Tunneling Current in Heterostructures Under Transverse-Longitudinal Kinetic Energy Coupling;Advanced Science Letters;2018-11-01

5. Defects in Oxides in Electronic Devices;Handbook of Materials Modeling;2018-10-16

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