Interaction of SiC with Al2O3−(t + m)ZrO2(Y2O3) Oxide Composition

Author:

Ivannikov A. Yu.1,Mel’nikov M. D.12,Kargin Yu. F.1,Frolova M. G.1,Lysenkov A. S.1,Perevislov S. N.3,Petrakova N. V.1,Kim K. A.1,Sevost’yanov M. A.1

Affiliation:

1. Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

2. Mendeleev Russian University of Chemical Technologies

3. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences

Abstract

We employed contact alloying in the range 1000–1860°С to study the reaction specifics between SiC and Al2O3−(t + m)ZrO2(Y2O3) oxide composition. Real-time experiments with photographic recording of the changing size and shape of the Al2O3−(t + m)ZrO2(Y2O3) sample on a SiC ceramic substrate showed that Al2O3−(t + m)ZrO2(Y2O3) compositions react with the silicon carbide substrate in the range 1720–1860°С to melt and penetrate into (impregnate) the substrate. X-ray powder diffraction patterns were measured for samples taken from the contact area of the oxide composition with SiC directly on the substrate and in a chipped-off 1-mm-deep near-surface layer. ZrС, Al2Y4O9, and Al3.21Si0.47 were formed in the contact area via redox reactions involving oxide melt, in addition to 6H-SiC, Si and Al2O3, t-ZrO2 phases, which are the initial components of the substrate and oxide composition, respectively.

Publisher

The Russian Academy of Sciences

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