Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.-Reference-Cited by-同舟云学术

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Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.

Published:2023-10-01 Issue:10 Volume:68 Page:973-979
ISSN:0033-8494
Container-title:Радиотехника и электроника
language:
Short-container-title:Radiotehnika i èlektronika

Author:

Afanas'ev M. S.¹,Belorusov D. A.¹,Kiselyov D. A.¹,Luzanov V. A.¹,Chucheva G. V.¹

Affiliation:

1. Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Abstract

Hafnium oxide (HfO_2) films were synthesized onto silicon substrates by magnetron sputtering under various technological conditions. Research results presented structural composition of HfO2 films and electrical properties of heterostructures metal-insulator-semiconductor (Ni–HfO_2–Si) based on them.

Publisher

The Russian Academy of Sciences

Reference25 articles.

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5. Yuan G., Wang Ch., Tang W. et al. // Acta Physica Sinica. 2023. Article ASAP. https://doi.org/10.7498/aps.72.20222221

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