Study and characterization of indium oxynitride photoconductors
Author:
Affiliation:
1. Universidade de São Paulo, Brasil
Publisher
FapUNIFESP (SciELO)
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.scielo.br/pdf/mr/v17n2/aop_212713.pdf
Reference8 articles.
1. Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route;Miyake A;Materials Research Bulletin,2009
2. Low Temperature Growth of In2O3 and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In;Zervos M;Nanoscale Research Letters,2008
3. An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering;Sungthong A;Applied Surface Science,2008
4. Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles;Ko TS;Journal of Vacuum Science and Technology A,2006
5. Evidence for p-type doping of InN;Jones RE;Physical Review Letters,2006
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrochromic properties of InON thin films prepared by DC magnetron sputtering;Applied Physics A;2024-02-07
2. Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor;ACS Applied Materials & Interfaces;2018-04-18
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