Lattice Site Location of Group VII Impurities in Silicon

Abstract

ABSTRACTChlorine- and iodine-implanted silicon have been investigated using the channeling/RBS technique after laser and oven annealing. Both annealing methods result in good epitaxial recrystallization of the implanted layer. A large near-substitutional I fraction exceeding 90% was found after oven annealing at 875°C. The near-substitutional fractions found after laser annealing for Cl and I, and after thermal annealing at 900°C for Cl are in the order of 50% only. The precise lattice site for these Cl and I fractions are determined by fitting the angular scans with simulated results. The results are interpreted in terms of vacancy association.