Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles-Reference-Cited by-同舟云学术

Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles

Published:2006 Issue: Volume:912 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Clarysse Trudo H.,Moussa Alain,Leys Frederik,Loo Roger,Vandervorst Wilfried,Benjamin Mark C.,Hillard Robert J.,Faifer Vladimir N.,Current Michael I.,Lin Rong,Petersen Dirch H.

Abstract

AbstractComparison of state-of-the-art zero-penetration sheet resistance tools on ultra-shallow Boron CVD layers on top of a medium doped As layer.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige

2. Accurate electrical activation characterization of CMOS ultra-shallow profiles

3. 1 ITRS roadmap, FEP section (www.itrs.net/common/2005ITRS/Home2005)

4. Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-2 nm boron doping in silicon using novel ultra-thin SiO2 film produced by sol–gel dip coating as a capping layer;Semiconductor Science and Technology;2021-06-11

2. Vibration tolerance of micro-electrodes;Journal of Micromechanics and Microengineering;2018-06-06

3. Graphene Conductance Uniformity Mapping;Nano Letters;2012-09-07

4. Anomalous activation of shallow B+ implants in Ge;Materials Letters;2011-12

5. Three-way flexible cantilever probes for static contact;Journal of Micromechanics and Microengineering;2011-06-27