Author:
Kadam Ankur A.,Jahagirdar Anant H.,Dhere Neelkanth G.
Abstract
AbstractAnalysis of CuIn1-x Gax Se2-y Sy (CIGSS) absorber and molybdenum back contact layer was carried out to understand the changes in the microstructure of CIGSS layer as a function of the deposition conditions and the nature of stress in the underlying Mo film. All the depositions were carried out on 10 cm x 10 cm glass substrates. Compressive and tensile stressed molybdenum films were prepared with combinations of deposition parameters; power and pressure. CIGSS absorber layer was prepared by depositing metallic precursors using DC magnetron sputtering followed by selenization and sulfurization. Molybdenum layer deposited at 300 W and 3 x 10 Torr pressure produced compressive stress with compact, well adherent and lower sheet resistance as compared to the tensile stressed film deposited at 200 W and 5 x 10 Torr. The crystallinity of the CIGSS film was found not to depend on the stress in the underlying molybdenum film. However, the adhesion at the Mo/CIGSS as well as gallium profile at the Mo/CIGSS interface were affected by the stress.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. 13 Kadam A. A. and Dhere N. G. , To be published in Vacuum Science and technology, July/August issue (2005).
2. Stress, strain, and microstructure of sputter‐deposited Mo thin films
3. CIGS2 thin-film solar cells on flexible foils for space power
4. Investigations on Microstructure, Surface Topography, and Growth Process of Sputtered Molybdenum Showing Texture Turnover
5. 9 Tanaka Y. , Akema N. , Morishita T. , Okumura D. , Kushiya K. , Proceedings of the 17th EC Photovoltaic Solar Energy Conference, Munich, October 2001; 989–994.
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