Author:
Endisch D.,Barth K.,Lau J.,Peterson G.,Kaloyeros A. E.,Tuenge D.,King C. N.
Abstract
ABSTRACTSrS:Ce is an important material for full color electroluminescent (EL) flat panel displays. Using a combination of SrS:Ce/ZnS:Mn and appropriate color filters high quality full color displays have been demonstrated [1]. Major issues for commercially viable process integration of SrS:Ce are the combination of high luminance, high growth rate, and process temperatures below 600°C for compatibility with low cost glass substrates. This work describes the process development and optimization of metal-organic chemical vapor deposition (MOCVD) of SrS:Ce. MOCVD is a promising candidate for deposition of SrS:Ce because it can provide the required growth rates and allows control of crystal structure and stoichiometry. Growth of SrS:Ce was performed in the temperature range from 400°C to 530°C using Sr(tmhd)2, Ce(tmhd)4, and H2S as precursors. The structure of the SrS:Ce was found to be strongly dependent on the H2S flow. A brightness of 15 fL and an efficiency of 0.22 lm/W has been achieved (40 V above threshold voltage, 60 Hz AC). Film analysis included Rutherford backscattering (RBS), X-ray diffraction (XRD), atomic force microscopy (AFM), and EL measurements. Results on the correlation between process parameters, film structure, grain size and EL performance will be presented.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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