Author:
Terakawa Akira,Murayama Hiroko,Naruse Yohko,Katayama Hirotaka,Sekimoto Takeyuki,Yata Shigeo,Matsumoto Mitsuhiro,Yoshida Isao,Hishida Mitsuoki,Aya Youichiro,Iseki Masahiro,Taguchi Mikio,Tanaka Makoto
Abstract
ABSTRACTWe have fabricated high-efficiency a-Si/µc-Si tandem solar cells and modules with a very high µc-Si deposition rate using Localized Plasma Confinement CVD to give very high-rate deposition (>2.0 nm/s) of device-grade µc-Si layers. For further progress in productive plasma-CVD techniques, we have studied plasma phenomena by combining newly developed plasma simulation and plasma diagnosis techniques that reveal the importance of non-emissive atomic hydrogen. We also have proposed a model of defective µc-Si formation on highly textured substrates in which the atomic H in plasma is assumed to play an important role. We are also developing a non-vacuum deposition technique that we term “Liquid Si Printing.” A new record conversion efficiency for HIT solar cells of 24.7% has been achieved using a very thin c-Si wafer (Thickness: 98 µm, Area: 102 cm2).
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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