Effect of the Surface on Optical properties of AlGaAs/GaAs heterostructures with double 2-DEG-Reference-Cited by-同舟云学术

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Effect of the Surface on Optical properties of AlGaAs/GaAs heterostructures with double 2-DEG

Published:2013 Issue: Volume:1534 Page:A57-A62
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Zamora-Peredo L.,Cortes-Mestizo I.,García-Gonzalez L.,Hernandez-Torres J.,Vázquez-Cortes D.,Shimomura S.,Cisneros A.,Méndez-García V.,Lopez-Lopez M.

Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. Photoreflectance of AlxGa1−xAs and AlxGa1−xAs/GaAs interfaces and high‐electron‐mobility transistors

2. 11. Zamora-Peredo L. , Cortes-Mestizo I. E. , Garcia-Gonzalez L. , Hernandez-Torres J. , Vázquez-Cortés D. , Shimomura S. , Cisneros-de la Rosa A. , and Méndez-García V. H. , Journal of Crystal Growth, in press.

3. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

4. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors

5. Surface passivation technology for III–V semiconductor nanoelectronics

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