Author:
Børgesen P.,Korhonen M. A.,Sullivan T. D.,Brown D. D.,Li C.-Y.
Abstract
ABSTRACTAccording to a new electromigration model, small thermal stress induced voids remain trapped at grain and phase boundaries, growing under an electric current. When they reach a ‘threshold’ size, migration and coalescence leads to rapid line failure. Predictions are compared to experimental results for Al, Al(0.6%Si), and Al(1.6%Cu) lines.
Publisher
Springer Science and Business Media LLC
Reference12 articles.
1. Electromigration—A brief survey and some recent results
2. Electromigration Induced Damage and Structure Change in Cr-Al/Cu and Al/Cu Interconnection Lines
3. Stress‐migration related electromigration damage mechanism in passivated, narrow interconnects
4. 5. Brown D. D. , Børgesen P. , Lilienfeld D. A. , Korhonen M. A. , and Li C.-Y. , this symposium
5. 4. Børgesen P. , Lee J. K. , Gleixner R. , and Li C.-Y. , submitted to Appl. Phys. Lett.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献