High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding

Abstract

ABSTRACTThis research addresses silicon nitride dielectrics for a-Si:H TFTs. Si-Si bonds in these films detected by AES have been identified as the major factor that degrades the performance of the TFTs. With no detected Si-Si bonds in the silicon nitride and a relatively low concentration of Si-NH bonds, the TFTs show optimized performance.