Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?

Abstract

ABSTRACTExperimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either the normal or the lognormal lateral distribution of the barrier height. It is concluded that from physical point of view the lognormal lateral distribution of the Schottky barrier height proposed first in this work, is more likely than the normal distribution.