Author:
Tsuge Sadaji,Hishikawa Yoshihiro,Okamoto Shingo,Sasaki Manabu,Tsuda Shinya,Nakano Shoichi,Kuwano Yukinori
Abstract
ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. Effects of hydrogen atoms on the network structure of hydrogenated amorphous and microcrystalline silicon thin films
2. Hydrogenation kinetics and defect termination of post‐plasma‐treated chemical‐vapor‐deposited amorphous silicon film
3. Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
4. [3] Nishiwaki H. , Ohnishi M. , Haku H. , Dohjoh H. , Sayama K. , Hishikawa Y. , Nakashima Y. , Wakizaka K. , Tsuda S. , Nakano S. , Kishi Y. and Kuwano Y. in Proceedings of the 6th International Photovoltaic Science and Engineering Conference, India, 469 (1992)
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献