Author:
Young D.A.,Fauchek P.M.,Liu Y.M.,Nighan W.L.,Fortmann C.M.
Abstract
ABSTRACTThe lifetime of carriers injected optically in the extended states of amorphous silicon-germanium alloys has been measured by time-resolved pump and probe optical techniques using either a femtosecond dye laser or a picosecond free electron laser. When Ninj > 1018 cm-3, the lifetime of the carriers is in the picosecond time domain. Our results are comparable to what we have observed previously in a-Si:H and very recently in a-Si,C:H. There are two lifetime regimes: at high densities, the recombination is bimolecular and nonradiative, whereas at lower densities, the recombination tends to be monomolecular but still nonradiative. The origin of these lifetimes is discussed.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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1. Phononic engineered materials and devices;Journal of Non-Crystalline Solids;2008-05
2. Deposition Conditions and the Optoelectronic Properties of a-Si;Plasma Deposition of Amorphous Silicon-Based Materials;1995