Author:
Bösker G.,Stolwijk N.A.,Mehrer H.,Södervall U.,Thordson J.V.,Anderson T.G.,Burchard A.
Abstract
ABSTRACTSelf-diffusion on the As sublattice in intrinsic GaAs was investigated in a direct way by As tracer diffusion measurements using the radioisotopes 73As and 76As and in an indirect way by annealing of buried nitrogen doping layers in epitaxially grown GaAs/GaAs:N heterostructures. The latter experiments were analyzed by secondary ion mass spectroscopy and interpreted within the framework of the kick-out mechanism yielding the As diffusivities mediated by As interstitials IAs. Comparison of with tracer diffusion coefficients – including data reported in the literature–points to a substantial contribution of IAs to As diffusion in intrinsic GaAs under As-rich ambient conditions.
Publisher
Springer Science and Business Media LLC
Reference19 articles.
1. [19] Philibert J. , Atom Movements–Diffusion and Mass Transport in Solids, Les Ulis: Les Editions de Physique 1991.
2. [18] Bösker G. , Stolwijk N.A. , Thordson J.V. , Södervall U. and Andersson T.G. , in preparation
3. Simulation of critical IC fabrication processes using advanced physical and numerical methods
4. High-temperature diffusion of sulphur in GaAs
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献