Spectral hole burning in sol-gel-derived Eu3+-doped film

Abstract

The sol-gel technique was applied to the preparation of Eu3+ ion–doped films, which showed persistent spectral hole burning. A gel film of ∼3500-nm thickness was prepared by dip-coating of the solution synthesized from Si(OC2H5)4, CH3Si(OC2H5)3, Eu(NO3)3 · 6H2O, and hydropropyl-cellulose. The spectral hole was burned in the 7F0 → 5D0 transition band of the Eu3+ ions at 7 K, the depth of which was 24% of the total fluorescence intensity and decreased as the heat-treatment temperature of film increased. It was found that the hole was thermally filled and erased above ∼170 K; the temperature at which the hole was erased was lower for the film heated at high temperature.