Analysis of Dislocation Networks and Electronic Properties of Dendritic Web Silicon

Abstract

AbstractDuring the growth of dendritic web silicon, an ideal material for fabrication of high efficiency solar cells, a thin ribbon of silicon single crystal is obtained. Due to thermal stresses characteristic in this growth process, dislocations and residual stresses are observed in most ribbons. In this study, transmission X-ray topography was used for analyzing dislocation networks in as-grown web silicon. We were able to correlate minority carrier diffusion length with the configuration of the networks that are strongly affected by twin planes lying midway across the web thickness. Analysis of the networks is also useful in providing information regarding regions of high stress levels associated with a given growth environment.