Magnetic and Structural Properties of Mn-implanted Si

Abstract

ABSTRACTP-type Si wafers (∼1019 cm−3) were implanted with 300 keV Mn+ ions at 350°C to a dose of 1×1016 cm−2, and then annealed at 800°C for 5 min. The magnetic properties with dependence upon temperature were measured by using a Superconducting Quantum Interference Device (SQUID) magnetometer. The Mn-implanted Si compound shows ferromagnetic ordering above room temperature. The saturation magnetization increases by ∼ 2 × after annealing and the Curie temperature is TC > 400 K. The structural properties have been investigated by means of Secondary Ion Mass Spectroscopy (SIMS) depth profiling and Transmission Electron Microscope (TEM) imaging. Measurements showed that the Mn atoms redistribute in the Si crystal due to the thermal annealing and form a band layer composed of nanoscale structures such as crystallites or defects.